Multiple Electric Vacuum Sintering Furnace For Silicon Carbide Recrystallization

Multiple Electric Vacuum Sintering Furnace For Silicon Carbide Recrystallization

Vacuum Sintering Furnace Application:

Vacuum Sintering Furnace Mainly used for recrystallization of silicon carbide

Main technical performance and indicators

Maximum operating temperature: 2450 ° C

Common temperature: 2400 ° C

Heating method: induction heating

Working gas in the furnace: nitrogen argon

Temperature uniformity: ≤ ± 10 ° C

Temperature control accuracy: ±1 °C

According to the needs of the sintering process time, multiple electric furnaces can be arranged in a single power supply, and the heating and cooling of the individual furnaces can be respectively performed to achieve continuous operation.

Temperature measurement: WRe5/26 thermocouple (0-1700 °C) + US RATEK dual colorimetric infrared thermometer (1000-3200 ° C); US RATEK monochrome infrared thermometer (300-1100 ° C) + US RATEK double ratio Color infrared thermometer (1000-3200 ° C)

Temperature control: PID intelligent program control and manual control

Superior process performance, making product quality a new step

The silicon carbide sintering furnace has excellent process performance, and the produced product has uniform particles, complete reaction, high carbon content and good quality;

The device adopts multi-channel data acquisition and displays and operates on the man-machine interface. The operating parameters are clear at a glance, the operation is simple, and the labor intensity is low;

The device has data recording and dumping functions, and the data can be viewed through the historical curve and can be transferred to the mobile storage medium;

Energy-saving, special coil and insulation structure, stable power output and high electrical efficiency.